Thermoplasmonic laser-induced backside wet etching of sapphire
Tsvetkov M. Y., Minaev N. V., Akovantseva A. A., Timashev P. S., Muslimov A. E., Kanevskii V. M.
Quantum Electronics
Vol.49, Issue2, P. 133-140
Опубликовано: 2019
Тип ресурса: Статья
Аннотация:
The technology of thermoplasmonic laser-induced backside wet etching is proposed to microstructure such solid and difficult-to-process materials as sapphire. In this technology, the laser absorbing medium is silver nanoparticles obtained from a precursor (AgNO 3 ) and providing significant laser radiation absorption due to the presence of plasmonic absorption with the formation of a substantially localised region with extremely high temperatures and pressures. This approach makes it possible to process sapphire both in the 'gentle' regime with the formation of nanometre structures and in the 'strong' regime to allow for the formation of 'deep' structures with etching rates up to several micrometers per pulse and high aspect ratio. The possibility of formation of periodic structures in sapphire in the above-threshold regime is shown. © 2019 Kvantovaya Elektronika and Turpion Ltd
Ключевые слова:
Laser-induced backside wet etching; Laser-induced periodic structures; Microstructuring; Sapphire; Thermo-plasmonics
Aspect ratio; Laser materials processing; Nitrogen compounds; Periodic structures; Plasmonic nanoparticles; Plasmonics; Plasmons; Sapphire; Silver compounds; Silver nanoparticles; Absorbing medium; High aspect ratio; High temperature; Laser induced periodic structures; Laser-induced backside wet etchings; Micro structuring; Process materials; Radiation absorption; Wet etching
Язык текста: Английский
ISSN: 1468-4799
Tsvetkov M. Y.
Minaev N. V.
Akovantseva A. A. Anastasiya Aleksandrovna 1988-
Timashev P. S. Petr Sergeevich 1978-
Muslimov A. E.
Kanevskii V. M.
Цветков М. Y.
Минаев Н. В.
Акованцева А. А. Анастасия Александровна 1988-
Тимашев П. С. Петр Сергеевич 1978-
Муслимов А. Е.
Каневскии В. М.
Thermoplasmonic laser-induced backside wet etching of sapphire
Текст визуальный непосредственный
Quantum Electronics
Turpion Limited
Vol.49, Issue2 P. 133-140
2019
Статья
Laser-induced backside wet etching Laser-induced periodic structures Microstructuring Sapphire Thermo-plasmonics
Aspect ratio Laser materials processing Nitrogen compounds Periodic structures Plasmonic nanoparticles Plasmonics Plasmons Sapphire Silver compounds Silver nanoparticles Absorbing medium High aspect ratio High temperature Laser induced periodic structures Laser-induced backside wet etchings Micro structuring Process materials Radiation absorption Wet etching
The technology of thermoplasmonic laser-induced backside wet etching is proposed to microstructure such solid and difficult-to-process materials as sapphire. In this technology, the laser absorbing medium is silver nanoparticles obtained from a precursor (AgNO 3 ) and providing significant laser radiation absorption due to the presence of plasmonic absorption with the formation of a substantially localised region with extremely high temperatures and pressures. This approach makes it possible to process sapphire both in the 'gentle' regime with the formation of nanometre structures and in the 'strong' regime to allow for the formation of 'deep' structures with etching rates up to several micrometers per pulse and high aspect ratio. The possibility of formation of periodic structures in sapphire in the above-threshold regime is shown. © 2019 Kvantovaya Elektronika and Turpion Ltd