Laser-induced modification of amorphous GST225 phase change materials
Kozyukhin S. A., Lazarenko P. I., Vorobyov Y. V., Savelyev M. S., Polokhin A. A., Glukhenkaya V. B., Sherchenkov A. A., Gerasimenko A. Yu.
Materiaux et Techniques
Vol.107, Issue3, Num.2019008
Опубликовано: 2019
Тип ресурса: Статья
DOI:10.1051/mattech/2019008
Аннотация:
In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irradiation with nanosecond laser pulses. Crystalline and melt-quenched amorphous regions were produced by exposure to laser single or multipulses, and were characterized by the optical microscopy and by the micro-Raman spectroscopy. Transition region between the amorphous and crystalline parts of the laser-modified area was investigated by atomic force microscopy. Using irradiation by single laser pulses with varying fluence, it was verified that crystallization was possible if the fluence is more than 90.4 mJ/cm2 © EDP Sciences, 2019
Ключевые слова:
Crystallization; GST225; Nanosecond pulse laser; Phase change material; Reamorphization
Atomic force microscopy; Crystalline materials; Crystallization; Irradiation; Laser pulses; Crystallization behavior; GST225; Laser induced modification; Micro Raman Spectroscopy; Nanosecond laser pulse; Nanosecond pulse lasers; Reamorphization; Transition regions; Phase change materials
Язык текста: Английский
ISSN: 1778-3771
Kozyukhin S. A.
Lazarenko P. I.
Vorobyov Y. V.
Savelyev M. S. Mikhail Sergeevich 1988-
Polokhin A. A.
Glukhenkaya V. B.
Sherchenkov A. A.
Gerasimenko A. Yu. Aleksandr Yuryevich 1983-
Козюхин С. А.
Лазаренко П. И.
Воробёв Y. В.
Савельев М. С. Михаил Сергеевич 1988-
Полохин А. А.
Глухенкайа В. Б.
Шерченков А. А.
Герасименко А. Ю. Александр Юрьевич 1983-
Laser-induced modification of amorphous GST225 phase change materials
Текст визуальный непосредственный
Materiaux et Techniques
Vol.107, Issue3 Num.2019008
2019
Статья
Crystallization GST225 Nanosecond pulse laser Phase change material Reamorphization
Atomic force microscopy Crystalline materials Crystallization Irradiation Laser pulses Crystallization behavior GST225 Laser induced modification Micro Raman Spectroscopy Nanosecond laser pulse Nanosecond pulse lasers Reamorphization Transition regions Phase change materials
In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irradiation with nanosecond laser pulses. Crystalline and melt-quenched amorphous regions were produced by exposure to laser single or multipulses, and were characterized by the optical microscopy and by the micro-Raman spectroscopy. Transition region between the amorphous and crystalline parts of the laser-modified area was investigated by atomic force microscopy. Using irradiation by single laser pulses with varying fluence, it was verified that crystallization was possible if the fluence is more than 90.4 mJ/cm2 © EDP Sciences, 2019